FQD8P10TM_F085

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FQD8P10TM_F085 datasheet

• Маркировка
  FQD8P10TM_F085
• Производитель
  Fairchild Semiconductor
• Описание
  Fairchild Semiconductor FQD8P10TM_F085 Current - Continuous Drain (id) @ 25?° C: 6.6A Drain To Source Voltage (vdss): 100V Fet Feature: Standard Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 15nC @ 10V Input Capacitance (ciss) @ Vds: 470pF @ 25V Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Power - Max: 2.5W Rds On (max) @ Id, Vgs: 530 mOhm @ 3.3A, 10V Series: - Vgs(th) (max) @ Id: 4V @ 250?µA RoHS: yes Transistor Polarity: P-Channel Drain-Source Breakdown Voltage: - 100 V Continuous Drain Current: - 6.6 A Resistance Drain-Source RDS (on): 0.53 Ohms Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Minimum Operating Temperature: - 55 C Power Dissipation: 2.5 W Factory Pack Quantity: 2500
• Количество страниц
  8 шт.
• Форматы файла
  HTML, PDF

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